Bipolar transistors

Results: 36



#Item
21MPS8099 - Amplifier Transistors

MPS8099 - Amplifier Transistors

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Source URL: allelcdn.upshotcommerce.com

Language: English - Date: 2014-09-03 18:09:18
22ICM 2003, Dec. 9-11, Cairo, Egypt.  A Novel Collector-tub Concept for Realizing High-Voltage Lateral Bipolar Transistors on SOI M Jagadesh Kumar* and Sukhendu Deb Roy** Department of Electrical Engineering, Indian Instit

ICM 2003, Dec. 9-11, Cairo, Egypt. A Novel Collector-tub Concept for Realizing High-Voltage Lateral Bipolar Transistors on SOI M Jagadesh Kumar* and Sukhendu Deb Roy** Department of Electrical Engineering, Indian Instit

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Source URL: eprint.iitd.ac.in

Language: English - Date: 2006-08-08 16:30:27
23Pete Horowitz 136 Golden Gate Point #501, Sarasota, FL 34236; [removed] RF Power Amplification Using a High Voltage, High Current IGBT New insulated gate bipolar transistors offer some amazing power amplifier

Pete Horowitz 136 Golden Gate Point #501, Sarasota, FL 34236; [removed] RF Power Amplification Using a High Voltage, High Current IGBT New insulated gate bipolar transistors offer some amazing power amplifier

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Source URL: www.arrl.org

Language: English - Date: 2014-05-13 15:59:26
24SVS/DVS Insulated Gate Bipolar Transistors (IGBT) Where are  Features

SVS/DVS Insulated Gate Bipolar Transistors (IGBT) Where are Features

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Source URL: fastchargeaust.com.au

Language: English - Date: 2012-12-08 01:50:11
25Introductory Electronics Laboratory  Experiment 6 Transistors as amplifiers and switches THE BIPOLAR JUNCTION TRANSISTOR

Introductory Electronics Laboratory Experiment 6 Transistors as amplifiers and switches THE BIPOLAR JUNCTION TRANSISTOR

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Source URL: www.sophphx.caltech.edu

Language: English - Date: 2014-09-29 19:13:51
26Multi-dimensional GICCR  Two-/three-dimensional GICCR for Si/ SiGe bipolar transistors M. Schroter1),2) and H. Tran2) ECE Dept., University of California San Diego, La Jolla, CA, USA

Multi-dimensional GICCR Two-/three-dimensional GICCR for Si/ SiGe bipolar transistors M. Schroter1),2) and H. Tran2) ECE Dept., University of California San Diego, La Jolla, CA, USA

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Source URL: www.nsti.org

Language: English - Date: 2005-05-23 13:17:16
27Modeling of charge and collector field in silicon-based bipolar transistors H. Tran and M. Schroter Chair for Electron Devices and Integrated Circuits University of Technology Dresden, Germany [removed]

Modeling of charge and collector field in silicon-based bipolar transistors H. Tran and M. Schroter Chair for Electron Devices and Integrated Circuits University of Technology Dresden, Germany [removed]

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Source URL: www.nsti.org

Language: English - Date: 2010-03-19 15:38:38
28ARTICLE  T‑Gate Aligned Nanotube Radio Frequency Transistors and Circuits with Superior Performance Yuchi Che, Yung-Chen Lin, Pyojae Kim, and Chongwu Zhou*

ARTICLE T‑Gate Aligned Nanotube Radio Frequency Transistors and Circuits with Superior Performance Yuchi Che, Yung-Chen Lin, Pyojae Kim, and Chongwu Zhou*

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Source URL: nanolab.usc.edu

Language: English - Date: 2013-08-20 10:04:15
29List of Publications  R. Dekker, R. van Es, S. Jansen, P. Kranen, H. Maas, A. Pruijmboom and J. van der Velden, “Charge sharing effects in bipolar transistors with sub-halfmicron emitter widths,” in IEEE Int. Electro

List of Publications R. Dekker, R. van Es, S. Jansen, P. Kranen, H. Maas, A. Pruijmboom and J. van der Velden, “Charge sharing effects in bipolar transistors with sub-halfmicron emitter widths,” in IEEE Int. Electro

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Source URL: www.dos4ever.com

Language: English - Date: 2009-08-06 16:47:22
30NTE2682 (NPN) & NTE2683 (PNP) Silicon Complementary Darlington Transistors Audio Power Output TO3PL Type Package Features: D High Forward Current Transfer Ratio, hFE

NTE2682 (NPN) & NTE2683 (PNP) Silicon Complementary Darlington Transistors Audio Power Output TO3PL Type Package Features: D High Forward Current Transfer Ratio, hFE

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Source URL: www.nteinc.com

Language: English - Date: 2013-08-28 16:55:34